Scientists / Open questions

大野英男

Hideo Ohno

自旋电子学、半导体磁性

17 个问题

Reliability physics of scaled MgO-barrier magnetic tunnel junctions: write-error statistics, barrier endurance under repeated current-induced switching, and the microscopic origin of bias-dependent TMR quenching
Carrier-density sensitivity of the in-plane uniaxial anisotropy and non-volatile electric-field switching of the magnetization in (Ga,Mn)As
Quantitative accuracy and microscopic origin of spin-orbit torques extracted from harmonic Hall voltage measurements
Energy-resolved grain-boundary trap distribution and validation of trap-density extraction in polycrystalline ZnO thin-film transistors
Diffusion-mediated degradation and mitigation of the CoFeB/MgO interface in high-temperature-annealed MgO magnetic tunnel junctions
Microscopic origin and predictive modeling of the incubation delay and switching statistics in spin-transfer-torque switching of in-plane CoFeB/MgO magnetic tunnel junctions
The p–d exchange value, the metal–insulator transition, and the hole density of (Ga,Mn)As: open questions from the 1998 magnetotransport determination
Origin of the low-temperature peak in the longitudinal Seebeck coefficient of annealed (Ga,Mn)As ferromagnetic semiconductor films
Interface-resolved microscopic account of tunneling in sputtered, annealed CoFeB/MgO/CoFeB magnetic tunnel junctions: symmetry-filtered channel formation, TMR bias asymmetry, and the effective barrier height
Making electric-field-induced precessional switching a practical write mechanism for perpendicular-anisotropy CoFeB/MgO magnetic tunnel junctions: the open issues raised by Kanai et al. (2012)
Microscopic mechanism of spin–orbit-torque switching in exchange-biased PtMn/ferromagnet bilayers: domain-scale reversal, the critical-current discontinuity at exchange-bias onset, and layer-resolved spin–charge conversion
Microscopic theory of current-driven domain-wall motion and spin-current-assisted creep in the ferromagnetic semiconductor (Ga,Mn)As
Open microscopic mechanisms in the MgO/CoFeB/Ta/CoFeB/MgO double-interface recording structure: damping-controlled switching current, boron/spacer-layer chemistry, and Ta-thickness interlayer coupling
Quantitative microscopic origin of spin–orbit torque switching in the collinear easy-axis (type-x) geometry: field-like torque, bulk/interfacial partition, and reconciliation of effective spin Hall angles
Microscopic origin of the interfacial Dzyaloshinskii–Moriya interaction in amorphous X/CoFeB/MgO heterostructures with heavy-metal underlayers (X = Hf, Ta, TaN, W)
Microscopic origin of superparamagnetism and of the electric-field-induced anisotropy change in ultrathin sputtered MgO/Co40Fe40B20/Ta films
Quantitative theory of electroluminescence polarization from spin-polarized hole injection in (Ga,Mn)As/GaAs/(In,Ga)As heterostructure spin-light-emitting devices

返回开放问题

Reliability physics of scaled MgO-barrier magnetic tunnel junctions: write-error statistics, barrier endurance under repeated current-induced switching, and the microscopic origin of bias-dependent TMR quenching

Carrier-density sensitivity of the in-plane uniaxial anisotropy and non-volatile electric-field switching of the magnetization in (Ga,Mn)As

Quantitative accuracy and microscopic origin of spin-orbit torques extracted from harmonic Hall voltage measurements

Energy-resolved grain-boundary trap distribution and validation of trap-density extraction in polycrystalline ZnO thin-film transistors

Diffusion-mediated degradation and mitigation of the CoFeB/MgO interface in high-temperature-annealed MgO magnetic tunnel junctions

Microscopic origin and predictive modeling of the incubation delay and switching statistics in spin-transfer-torque switching of in-plane CoFeB/MgO magnetic tunnel junctions

The p–d exchange value, the metal–insulator transition, and the hole density of (Ga,Mn)As: open questions from the 1998 magnetotransport determination

Origin of the low-temperature peak in the longitudinal Seebeck coefficient of annealed (Ga,Mn)As ferromagnetic semiconductor films

Interface-resolved microscopic account of tunneling in sputtered, annealed CoFeB/MgO/CoFeB magnetic tunnel junctions: symmetry-filtered channel formation, TMR bias asymmetry, and the effective barrier height

Making electric-field-induced precessional switching a practical write mechanism for perpendicular-anisotropy CoFeB/MgO magnetic tunnel junctions: the open issues raised by Kanai et al. (2012)

Microscopic mechanism of spin–orbit-torque switching in exchange-biased PtMn/ferromagnet bilayers: domain-scale reversal, the critical-current discontinuity at exchange-bias onset, and layer-resolved spin–charge conversion

Microscopic theory of current-driven domain-wall motion and spin-current-assisted creep in the ferromagnetic semiconductor (Ga,Mn)As

Open microscopic mechanisms in the MgO/CoFeB/Ta/CoFeB/MgO double-interface recording structure: damping-controlled switching current, boron/spacer-layer chemistry, and Ta-thickness interlayer coupling

Quantitative microscopic origin of spin–orbit torque switching in the collinear easy-axis (type-x) geometry: field-like torque, bulk/interfacial partition, and reconciliation of effective spin Hall angles

Microscopic origin of the interfacial Dzyaloshinskii–Moriya interaction in amorphous X/CoFeB/MgO heterostructures with heavy-metal underlayers (X = Hf, Ta, TaN, W)

Microscopic origin of superparamagnetism and of the electric-field-induced anisotropy change in ultrathin sputtered MgO/Co40Fe40B20/Ta films

Quantitative theory of electroluminescence polarization from spin-polarized hole injection in (Ga,Mn)As/GaAs/(In,Ga)As heterostructure spin-light-emitting devices