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    Scientists / Open questions

    拉马穆尔蒂·拉梅什

    Ramamoorthy Ramesh

    多铁性材料、氧化物电子学

    19 个问题

    1. Completing the spatially resolved steady-state negative-capacitance program: bias-dependent local constitutive mapping, rigorous local thermodynamics, and controllable negative-permittivity landscapes in multidomain ferroelectric heterostructures

    2. Quantitative remanent polarization, microscopic origin, and tunnel-junction performance limits of ~1 nm ferroelectric Hf0.5Zr0.5O2 films grown directly on silicon

    3. Quantitative piezoresponse metrology, interfacial amorphous-layer reliability, and device integration of ferroelectric PZT and BaTiO3 nanoshell tubes

    4. Mechanistic origin and predictive design of piezoelectricity in smectically ordered M13 bacteriophage films

    5. Microscopic mechanism of polarization-controlled electron tunneling into ferroelectric surfaces under a biased conductive tip

    6. Strain-driven morphotropic phase boundaries in single-composition perovskites: genericity, device-level viability, and the thermodynamic-kinetic limits of the two-phase region

    7. Deterministic electric-field control of room-temperature polar skyrmion bubbles: motion, switching, stability, and harnessing of skyrmion-based negative capacitance

    8. Electronic and magnetic reconstruction of the octahedral-tilt-suppressed interfacial layer in BiFeO3/La0.7Sr0.3MnO3 epitaxial heterostructures: determination of its metallic character, mechanism partition, and atomic-scale magnetic order

    9. Origin, quantitative microscopic description, and control of electronic conduction at ferroelectric domain walls in BiFeO3

    10. Achieving large magnetoresistance at low fields and room temperature in perovskite manganites: the unresolved processing and mechanism questions from the La-Ca-Mn-O colossal-magnetoresistance films

    11. Open problems in realizing scalable energy-efficient magnetoelectric spin–orbit (MESO) logic: experimental demonstration of cascaded, ~100 mV, attojoule-class circuits

    12. Quantitative mechanisms of electrode-dependent polarization fatigue, retention, and imprint in Pb(Zr,Ti)O3 thin-film ferroelectric capacitors on silicon

    13. Microscopic origin and experimental validation of the decoupling between lattice tetragonality and ionic displacements (local polarization) in ultrathin epitaxial PbTiO3-based ferroelectric films

    14. Practical room-temperature antiferromagnetic memory: efficient electrical writing, robust readout margin, and device reliability (open agenda of the FeRh antiferromagnetic memory resistor)

    15. Microscopic mechanism and materials design rules for the ferroelectric domain-wall photovoltaic effect

    16. Accessing the intrinsic polarization-switching time and switching kinetics of thin-film ferroelectric capacitors below circuit-limited timescales

    17. Deterministic room-temperature magnetoelectric control of ferrimagnetism in (LuFeO3)m/(LuFe2O4)1 superlattices: microscopic mechanism, spin-charge ground state, and the roles of strain and oxygen stoichiometry

    18. Robustness, generality, thickness scaling, and rigorous electrostatics of the mixed-ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

    19. Raising the open-circuit voltage and ambient stability of all-inorganic CsSnI3 lead-free perovskite solar cells: suppressing tin-vacancy self-doping and Sn2+ oxidation beyond the SnF2 vacancy-modulation baseline

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