Scientists / Open questions

细野秀雄

Hideo Hosono

材料科学、氧化物半导体、超导

15 个问题

  1. Microscopic mechanism and material dependence of superconductivity in the layered iron oxy-pnictide LaOFeP and related iron pnictides

  2. Microscopic pairing mechanism of the 26 K iron-pnictide superconductor La[O1-xFx]FeAs

  3. Surface science of the dicalcium nitride two-dimensional electride: atomically defined surfaces, orientation-resolved work functions, facet exposure of anionic electrons, and their ambient stability

  4. Microscopic origin of the deep subgap states in amorphous InGaZnO4 and a physically validated full-subgap density-of-states model for a-IGZO thin-film transistors

  5. Device-grade epitaxial p-type CuGaO2: controlled acceptor doping, single-domain growth, high hole mobility, and transparent p-n junction integration

  6. Mechanism and quantitative limits of the ultraviolet-light-induced persistent electronic conduction in hydride-ion-doped mayenite 12CaO·7Al2O3

  7. Microscopic origin of the absence of concentration quenching at the M(3) Eu2+Eu^{2+} site in the layered chlorometasilicate phosphor (Ca,Sr)7(SiO3)6Cl2:Eu2+(Ca,Sr)_7(SiO_3)_6Cl_2:Eu^{2+}

  8. Microscopic identity of the deep acceptor-like charged traps and stress-induced shallow subgap states underlying threshold-voltage instability in room-temperature deposited a-In–Ga–Zn–O thin-film transistors

  9. Microscopic origin, quantitative determination, and suppression of the occupied subgap density of states near the valence-band maximum of amorphous In–Ga–Zn–O

  10. Defect origin and conductivity limits of p-type transparent conducting CuAlO2: identifying the native acceptors and closing the gap with n-type transparent conductors

  11. Operando nitrogen-vacancy dynamics, active-site quantification, and durability of Ni-loaded rare-earth nitride catalysts for vacancy-mediated ammonia synthesis

  12. Microscopic origin, identity, and dynamics of the gate-voltage hysteresis centers in amorphous-InGaZnO4 thin-film transistors

  13. Reconciling computed band effective masses with measured carrier masses and element-specific structure in amorphous In-Ga-Zn-O: electron-phonon/many-body renormalization and medium-range order

  14. Unambiguous microscopic origin of the ~5-eV absorption band and its UV-driven photochemical conversion in Ge-doped silica (SiO2:GeO2) glasses

  15. Native-defect origin of coloration, sub-gap absorption, and luminescence in the transparent p-type layered oxysulfide LaCuOS, and its quantitative defect thermodynamics and control

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