Loh, Ong and Chew (Ferroelectrics 445, 136, 2013) solved the scaled Landau–Khalatnikov equation exactly for homogeneous polarization switching in second-order (quartic Landau–Devonshire) bulk ferroelectrics, unifying several empirical switching laws — Merz's linear law, the high-field reciprocal switching-time law, and the product rule — with Landau theory. Their own analysis leaves the completion of this analytical program open: extension to first-order (sextic-potential) ferroelectrics such as BaTiO, PZT and HfO-based films; reduction of the low-field regime near the coercive field to closed form, including whether the experimentally observed exponential (Fatuzzo–Merz) switching law can be derived from Landau–Khalatnikov dynamics at all; and a quantitative, constant-by-constant correspondence with the Kolmogorov–Avrami–Ishibashi statistical switching model. That source-faithful problem — three linked completions sharing one objective, unifying empirical switching phenomenology with Landau theory beyond the high-field, second-order, homogeneous bulk regime — is an open problem.
Background
A ferroelectric crystal carries a spontaneous electric polarization that can be reversed by an applied electric field . The speed of this reversal governs ferroelectric memories (FeRAM and ferroelectric-gate transistors) and is characterized experimentally by the switching time (the time for to reverse), the transient switching current , its maximum value , and the time at which that maximum occurs.
In Landau–Devonshire theory the ferroelectric state is described by a free-energy density expanded in even powers of : for a second-order (continuous) transition, ; a first-order (discontinuous) transition — as in BaTiO, PZT and HfO-based ferroelectric films — additionally requires a sextic term with a negative quartic coefficient, with . Switching dynamics is described by the Landau–Khalatnikov (LK) equation, a purely relaxational equation of motion (with a viscosity coefficient) for homogeneous, single-domain polarization reversal. Because this equation is nonlinear in , it was for decades solved essentially only numerically; Ishibashi (1992) gave an exact solution for one special parameter set only.
Loh, Ong and Chew (2013) introduced scaled variables — polarization , temperature (the reduced temperature, not the physical time ), field (with the zero-temperature coercive field) and time — in which the second-order LK equation reads , with the equation of state for the equilibrium polarization and a temperature-dependent coercive field (in homogeneous LK theory, the field at which the metastable polarization state loses stability). For complete switching () they factored the right-hand side and integrated by partial fractions, obtaining closed forms for the switching time , the maximum switching current (linear in field, reinterpreting Merz's empirical law), and, in the high-field limit , the reciprocal switching-time law (which over a limited field window appears linear, as observed experimentally) and the product rule with an explicit numerical constant, echoing empirical relations reported by Stadler and Zachmanidis. For incomplete (partial) switching () they gave expressions in terms of the three real roots of the equation of state.
Classical measurements on BaTiO by Merz (1954) established that grows linearly with at high fields but follows an exponential law at low fields (extended by Fatuzzo and Merz to other ferroelectrics in 1959). The standard statistical description of switching, the Kolmogorov–Avrami–Ishibashi (KAI) model, treats reversal as nucleation and growth of reversed domains: the switched fraction obeys , with the Avrami exponent set by the growth dimensionality (one-dimensional lateral domain growth, "Category 1" in Ishibashi's classification, gives ). Loh, Ong and Chew noted that their product rule suggests a correspondence with one-dimensional Category-1 KAI switching, but a quantitative comparison of proportionality constants was not possible because the two frameworks are mathematically different.
What the 2013 theory does not cover, in the authors' own words, is: (i) it is restricted to second-order transitions in bulk ferroelectrics, and its extension to first-order transitions "remains an open problem"; (ii) it contains no nucleation and growth, so the relation to KAI-type statistical models could not be established quantitatively; (iii) the results are not directly applicable to ferroelectric thin films and superlattices (layered ferroelectric structures) without further modification; and (iv) the low-field regime was not reduced to a simple closed form, and the experimental exponential law "remains to be analytically derived" from the LK equation.
Problem Statement
Complete the analytical Landau–Khalatnikov theory of homogeneous ferroelectric polarization switching beyond the high-field, second-order, bulk regime in which Loh, Ong and Chew (2013) solved it. With the scaled second-order dynamics as the established reference, the problem has three linked components:
(1) First-order ferroelectrics. Formulate the corresponding analytical theory for a first-order (sextic Landau–Devonshire) potential — the material class of BaTiO, PZT and HfO-based ferroelectrics — and solve the resulting LK dynamics exactly, or in controlled closed-form or matched-asymptotic approximations, for the equilibrium polarization, the switching time, and the switching-current characteristics as functions of applied field and temperature. The sextic equation of state is quintic in , so the second-order partial-fraction technique does not carry over directly.
(2) Low-field regime. Reduce the low-field regime near the coercive field ( from above, together with the partial-switching regime below it) to closed-form or controlled-asymptotic expressions, and determine what field dependence the deterministic LK equation actually predicts there. In particular, establish whether the experimentally observed low-field exponential law (Merz; Fatuzzo–Merz) can be derived from the LK equation.
(3) LK–KAI correspondence. Establish the quantitative relation between the Landau-based analytical expressions and the Kolmogorov–Avrami–Ishibashi statistical switching model, including the proportionality constants that the 2013 product rule suggests but could not fix, and delimit the regime (if any) in which homogeneous LK dynamics and nucleation-and-growth statistics describe the same switching process.
These three components share one objective: to unify the empirical switching phenomenology with Landau theory outside the regime already treated, so that switching-time, switching-current and partial-switching behavior become analytically predictable from Landau–Devonshire coefficients, field and temperature. The source additionally notes that its results are not directly applicable to ferroelectric thin films and superlattices without further modification; this remains a scope caveat on the 2013 theory's applicability rather than a deliverable of the present problem.
References
- Kok-Khuan Loh, Lye-Hock Ong, Khian-Hooi Chew (2013). Modeling Dynamic Ferroelectric Behavior with the Analytical Landau Theory. Ferroelectrics 445, 136–146. DOI: 10.1080/00150193.2013.814443. https://doi.org/10.1080/00150193.2013.814443
- Kok-Khuan Loh, Lye-Hock Ong, Khian-Hooi Chew (2014). Analytic theory of hydrostatic stress effect on switching dynamics in ferroelectrics. Physica Scripta 89, 075702. DOI: 10.1088/0031-8949/89/7/075702. https://doi.org/10.1088/0031-8949/89/7/075702
- Kok-Khuan Loh (2021). Analytical properties of switching current transients in ferroelectrics. Physica Scripta 96, 115805. DOI: 10.1088/1402-4896/ac14e0. https://doi.org/10.1088/1402-4896/ac14e0
- Yoshihiro Ishibashi (1992). Theory of Polarization Reversals in Ferroelectrics Based on Landau-Type Free Energy. Japanese Journal of Applied Physics 31, 2822. DOI: 10.1143/JJAP.31.2822. https://doi.org/10.1143/JJAP.31.2822
- Walter J. Merz (1954). Domain Formation and Domain Wall Motions in Ferroelectric BaTiO3 Single Crystals. Physical Review 95, 690–698. DOI: 10.1103/PhysRev.95.690. https://doi.org/10.1103/PhysRev.95.690
- E. Fatuzzo, W. J. Merz (1959). Switching Mechanism in Triglycine Sulfate and Other Ferroelectrics. Physical Review 116, 61–68. DOI: 10.1103/PhysRev.116.61. https://doi.org/10.1103/PhysRev.116.61
- H. L. Stadler, P. J. Zachmanidis (1963). Nucleation and Growth of Ferroelectric Domains in BaTiO3 at Fields from 2 to 450 kV/cm. Journal of Applied Physics 34, 3255–3260. DOI: 10.1063/1.1729173. https://doi.org/10.1063/1.1729173
- Yoshihiro Ishibashi, Yutaka Takagi (1971). Note on Ferroelectric Domain Switching. Journal of the Physical Society of Japan 31, 506–510. DOI: 10.1143/JPSJ.31.506. https://doi.org/10.1143/JPSJ.31.506
- Alexander K. Tagantsev, Igor Stolichnov, Nava Setter, Jeffrey S. Cross, Mineharu Tsukada (2002). Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films. Physical Review B 66, 214109. DOI: 10.1103/PhysRevB.66.214109. https://doi.org/10.1103/PhysRevB.66.214109
- Yunseok Kim, Hee Han, Woo Lee, Sunggi Baik, Dietrich Hesse, Marin Alexe (2010). Non-Kolmogorov–Avrami–Ishibashi Switching Dynamics in Nanoscale Ferroelectric Capacitors. Nano Letters 10, 1266–1270. DOI: 10.1021/nl9038339. https://doi.org/10.1021/nl9038339
- Ning Feng, Xiaoqing Huang, Xuhui Chen, Longfei Li, Zhao Rong, Lining Zhang (2021). Voltage Dependent Viscosity in Landau-Khalatnikov Theory for Switching Dynamics. 2021 9th International Symposium on Next Generation Electronics (ISNE), 1–3. DOI: 10.1109/ISNE48910.2021.9493604. https://doi.org/10.1109/ISNE48910.2021.9493604
- Shigeki Sakai, Mitsue Takahashi (2024). An Extended Kolmogorov–Avrami–Ishibashi (EKAI) Model to Simulate Dynamic Characteristics of Polycrystalline-Ferroelectric-Gate Field-Effect Transistors. Materials 17, 1077. DOI: 10.3390/ma17051077. https://doi.org/10.3390/ma17051077
- Tim D. Cornelissen, Indre Urbanaviciute, Martijn Kemerink (2020). Microscopic model for switching kinetics in organic ferroelectrics following the Merz law. Physical Review B 101, 214301. DOI: 10.1103/PhysRevB.101.214301. https://doi.org/10.1103/PhysRevB.101.214301
- Tae Kwon Song (2001). Ferroelectric pulse switching simulation with Landau-Khalatnikov equation of BaTiO3. Ferroelectrics 259, 157–162. DOI: 10.1080/00150190108008733. https://doi.org/10.1080/00150190108008733
- Ahmad Musleh Alrub, Lye-Hock Ong (2015). Switching properties of first-order ferroelectric thin films. The European Physical Journal B 88, 9. DOI: 10.1140/epjb/e2014-50209-y. https://doi.org/10.1140/epjb/e2014-50209-y
- Yoshihiro Ishibashi, Makoto Iwata (2020). Activation Energy of Ferroelectric Domain Wall. Journal of the Physical Society of Japan 89, 014705. DOI: 10.7566/JPSJ.89.014705. https://doi.org/10.7566/JPSJ.89.014705
- Lye Hock Ong, Khian-Hooi Chew (2011). Landau-Khalatnikov Switching Dynamics in Ferroelectric Superlattices. AIP Conference Proceedings, 86–88. DOI: 10.1063/1.3573696. https://doi.org/10.1063/1.3573696
- Kok-Khuan Loh, Lye-Hock Ong, Khian-Hooi Chew (2013). Analytical Landau-type model of polarization switching in ferroelectrics. Ceramics International 39, S311–S314. DOI: 10.1016/j.ceramint.2012.10.084. https://doi.org/10.1016/j.ceramint.2012.10.084
- Kok-Khuan Loh (2026). Analytical characterization of biaxial stress effect on electromechanical and hysteresis properties of uniaxial ferroelectrics. Journal of Advanced Dielectrics 16, 2550023 (online 2025). DOI: 10.1142/S2010135X25500237. https://doi.org/10.1142/S2010135X25500237