Whether a disordered two-dimensional electron gas (2DEG) with Coulomb interactions can form a genuine thermodynamic metallic phase — one with a localization length that diverges in the infinite-size, zero-temperature limit — is the central unresolved question of the two-dimensional metal-insulator transition (2D MIT) field. The non-interacting scaling theory forbids such a metal, yet experiments since 1994 show robust metallic behavior, and the finite-size quantum Monte Carlo study of Fleury and Waintal (Phys. Rev. Lett. 101, 226803 (2008)) found that interactions delocalize multi-component (spin- and valley-degenerate, M=4) systems so strongly that the extracted inverse localization length vanishes within statistical resolution — while showing no deviation from one-parameter scaling, leaving the existence of a true 2D metal undecided. The task asks for the thermodynamic-limit resolution of this question, together with the linked issues that define what experiments actually probe: possible deviations from one-parameter scaling outside the numerically explored window, the modification of sample trajectories by correlated disorder and screening, and the finite-temperature competition between interaction delocalization and hopping through localized excited states.
Background
In the scaling theory of localization (Abrahams, Anderson, Licciardello and Ramakrishnan, 1979), the dimensionless conductance of a disordered electronic system changes with system size according to a scaling function . In two dimensions (2D), and in the absence of spin-orbit coupling (the 'orthogonal' symmetry class), is negative for arbitrarily weak disorder, so a non-interacting 2D electron gas is always Anderson-localized in the thermodynamic limit: its conductance decays as with a finite localization length . This 'no metals in 2D' result was directly challenged in 1994 by transport experiments in silicon metal-oxide-semiconductor field-effect transistors (Si MOSFETs), in which the resistivity stopped decreasing and started increasing sharply as temperature was lowered below a density-dependent crossover (Kravchenko et al., 1994); similar apparent metallic behavior was subsequently found in many high-mobility 2D systems and is reviewed in Abrahams, Kravchenko and Sarachik (2001). The problem is theoretically hard because both disorder and electron-electron interactions must be treated non-perturbatively at low density. Two dimensionless parameters control the physics: , the ratio of Coulomb to Fermi kinetic energy (growing as density falls), and , the disorder strength, where is the Fermi momentum and the mean free path; as the density decreases both grow in a fixed ratio that characterizes a given sample. The number of internal components (spin, and valley degeneracy in Si-like materials) also matters: for GaAs heterostructures, for Si MOSFETs (spin valley). Theoretical proposals for the apparent metal range from interaction-corrected scaling theories, which describe data through two-parameter scaling but contain no accepted stable 2D metallic fixed point (Punnoose and Finkel'stein, 2005; Anissimova et al., 2007), to phase-separation scenarios in which transport is carried by an intermediate state between a Fermi liquid and a Wigner crystal — the crystalline state of electrons stabilized by Coulomb repulsion — such as the electronic microemulsion of Spivak (2003). In this context, Fleury and Waintal (2008) performed the first quantitative calculation of the localization length of a disordered 2DEG including many-body correlations, using ground-state quantum Monte Carlo on a lattice model with Ewald-summed Coulomb interactions (a standard periodic-image lattice-sum treatment of the long-ranged interaction) combined with finite-size scaling (method in Fleury and Waintal, Phys. Rev. Lett. 100, 076602 (2008)). They found that correlations delocalize the system: for the effect is a finite increase of (still an insulator), while for the data flow to and the extracted vanishes within statistical resolution ( is the mean interparticle spacing), i.e. the system is 'practically' metallic at the sizes studied. Crucially, they observed no deviation from the non-interacting one-parameter scaling curve — meaning scaling is described by the single parameter — within the explored window , , so they could not conclude that the system becomes a 'true' metal in the thermodynamic sense (a divergence of ), and stated that systems 'are not "true" thermodynamic metals and would become insulating at ultrasmall temperature (2-C systems are unambiguously insulators)'. They further proposed that the observed metallic behavior of Si MOSFETs is a finite-temperature effect of interaction delocalization: the ground state is delocalized while the excited states (populated by temperature or spin polarization) are localized, which accounts semi-quantitatively for the resistivity increase with , its destruction by an in-plane magnetic field, and the special role of valley degeneracy; they noted that mapping experiments onto the plane requires understanding correlated disorder (which raises at low density) and screening (which lowers the effective disorder). Note that the source title's phrase 'many-body localization' (2008) predates the modern many-body-localization literature and refers to localization properties of the interacting many-body ground state, not to the eigenstate-phase problem. More recent experiments have confirmed the persistence of metallic behavior in ultra-clean two-valley 2D systems even under full spin polarization (Melnikov et al., 2020), and the phenomenon, its Wigner-Mott interpretation, and the low-density phases are reviewed by Shashkin and Kravchenko (2021) — but no experimental or theoretical work has settled the zero-temperature, infinite-size question.
Problem Statement
Determine the thermodynamic-limit fate of the disordered, interacting, low-density two-dimensional electron gas in the orthogonal symmetry class: does the interaction-induced delocalization found at finite system sizes — strongest for multi-component systems with spin and valley degeneracy (, as in Si MOSFETs), where the extracted inverse localization length vanishes within statistical resolution — extrapolate to a genuine metallic phase, i.e. a localization length that diverges as system size grows (in practice signaled by a metallic fixed point with or by a demonstrated breakdown of the non-interacting one-parameter scaling curve), or does one-parameter scaling ultimately prevail so that every such system is an insulator in the zero-temperature thermodynamic limit (at ultrasmall temperature for ; unambiguously for )? This single overarching objective comprises the linked sub-questions that jointly characterize it — settling the thermodynamic-limit fate stated above is what completes the task, and (a)–(c) set out the linked issues that a resolution must address: (a) whether small but physically important deviations from one-parameter scaling exist outside the numerically explored window , ; (b) how correlated disorder and screening by the electrons modify the sample-specific trajectory at low density, so that experimental systems can be mapped quantitatively onto the phase diagram; and (c) the quantitative finite-temperature interplay between interaction delocalization of the ground state and the population of localized excited states, including variable-range hopping (thermally activated tunneling between distant localized states), which fixes what temperature window the observed 'metallic' behavior reflects. An answer may take the form of a controlled analytic theory establishing or excluding a stable 2D metallic fixed point, a numerical scaling study whose thermodynamic extrapolation decides the sign of at asymptotically large sizes, or an experimental determination reaching the relevant ultralow-temperature regime.
References
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