N. F. Mott (Phil. Mag. B 56, 257, 1987) proposed that viscous flow in vitreous SiO2\mathrm{SiO_2} is mediated by broken Si-O bonds acting as charged point-defect pairs (a threefold-coordinated silicon and a non-bridging oxygen), and analyzed two mechanisms: single-bond ring diffusion with activation energy W+UW+U and two-bond Coulomb-assisted recombination with activation energy 2W+U2W+U, where WW is the defect formation energy and UU the migration activation energy. The paper left open: (i) the microscopic origin of the very large entropic prefactor exp⁡(ΔS/kB)≈107\exp(\Delta S/k_{\mathrm{B}})\approx 10^{7} required by fits to high-purity silica data (activation energy 171 kcal/mol≈7.4 eV171\ \mathrm{kcal/mol}\approx 7.4\ \mathrm{eV}), conjecturing but not quantifying configurational multiplicity of multi-defect events; (ii) independent determination of WW and UU (the paper's 2W+U2W+U estimate, 5.6-6.6 eV, came from a private communication); (iii) identification of the dominant mechanism in each temperature and composition range, with the prediction that the apparent activation energy drops when dopant-induced non-bridging-oxygen concentration exceeds exp⁡(−W/kBT)\exp(-W/k_{\mathrm{B}}T); and (iv) the kinetics of defect formation, mutual capture, and recombination in the three-dimensional continuous random network.

Background

Vitreous silicon dioxide (silica glass) is the archetypal "strong" glass former: above its glass transition temperature TgT_{\mathrm{g}} (where the viscosity η\eta reaches ∼1012 Pa s\sim 10^{12}\ \mathrm{Pa\,s}) its shear viscosity follows an Arrhenius law η=η∞exp⁡(E/RT)\eta=\eta_\infty\exp(E/RT) with an almost constant activation energy EE, in contrast to "fragile" liquids whose η(T)\eta(T) bends strongly upward on cooling. Structurally, vitreous SiO2\mathrm{SiO_2} is a continuous random network (CRN) of corner-sharing SiO4\mathrm{SiO_4} tetrahedra: a three-dimensional network without periodicity in which nearly every oxygen bridges two silicons. Breaking a Si-O bond in this network creates a pair of coordination defects: a threefold-coordinated silicon and a non-bridging oxygen (NBO), an oxygen bonded to only one silicon; for the charged-defect picture used by Mott these carry positive and negative charge respectively, forming a so-called valence-alternation pair. The Stokes-Einstein relation η=kBT/(3πDa)\eta=k_{\mathrm{B}}T/(3\pi D a) connects viscosity to the diffusion coefficient DD of a flow unit of size aa.

The experimental facts that motivated Mott's paper are classical: careful measurements by Hetherington, Jack and Kennedy (Phys. Chem. Glasses 5, 130, 1964) on high-purity vitreous silica gave an Arrhenius activation energy of about 171 kcal/mol≈7.4 eV171\ \mathrm{kcal/mol}\approx 7.4\ \mathrm{eV} (for scale, kBT≈0.17 eVk_{\mathrm{B}}T\approx 0.17\ \mathrm{eV} at 2000 K), several times a single Si-O bond energy (∼3.9 eV\sim 3.9\ \mathrm{eV}), together with a prefactor that, when compared with natural atomic-scale prefactors, implies an entropy factor exp⁡(ΔS/kB)≈107\exp(\Delta S/k_{\mathrm{B}})\approx 10^{7}, i.e. ΔS≈16 kB\Delta S\approx 16\ k_{\mathrm{B}} per flow event. The related network oxide GeO2\mathrm{GeO_2} shows activation energies consistent with single-bond breaking and no such entropy anomaly. Earlier treatments either used Stokes-Einstein scaling appropriate to simple liquids or Nabarro-Herring creep formulae (diffusional creep of polycrystals) that carry an unphysical specimen- or grain-size dependence.

Mott's 1987 model attributes flow to the thermal generation and motion of the broken-bond defect pairs. In the single-bond mechanism, one broken bond is created (WW), and the less mobile member of the pair diffuses around an −Si−O−Si−O−-\mathrm{Si}-\mathrm{O}-\mathrm{Si}-\mathrm{O}- ring (UU), changing the number of bonds in adjacent rings and producing an irreversible network rearrangement; the activation energy is W+UW+U. In the two-bond mechanism, two bonds break close enough (within a Coulomb capture radius R0R_0) that oppositely charged members of different pairs drift together and recombine under Coulomb attraction in the dielectric (κ≈4\kappa\approx 4), giving plastic relaxation with activation energy 2W+U2W+U and, after the capture radius cancels algebraically, the result

1η=e2κa 1kBT ωa3kBT exp⁡ ⁣[−2W+UkBT],\frac{1}{\eta}=\frac{e^{2}}{\kappa a}\,\frac{1}{k_{\mathrm{B}}T}\,\frac{\omega a^{3}}{k_{\mathrm{B}}T}\,\exp\!\left[-\frac{2W+U}{k_{\mathrm{B}}T}\right],

with ee the elementary charge, ω\omega an attempt frequency, and aa an atomic length. The model predicts a regime switch: when the concentration of non-bridging oxygens introduced by dopants (water, halogens, alkalis) exceeds the thermal concentration exp⁡(−W/kBT)\exp(-W/k_{\mathrm{B}}T), the single-bond mechanism takes over and the measured activation energy should drop from 2W+U2W+U toward W+UW+U. Numerically, Mott estimated W≈3W\approx 3-4 eV4\ \mathrm{eV} from the Si-O bond energy, quoted 2W+U=5.62W+U=5.6-6.6 eV6.6\ \mathrm{eV} from a private communication (J. Robertson, 1986), below the experimental 7.4 eV7.4\ \mathrm{eV}, and found R0≈40 A˚R_0\approx 40\ \text{Å} and a two-bond prefactor of order 4040 at ∼1500 K\sim 1500\ \mathrm{K} - far short of the observed 10710^{7}. He conjectured that the simultaneous formation of four nearby defects might supply the missing entropy through configurational multiplicity, but did not quantify this.

Later work established the phenomenological skeleton: the best viscosity data show two Arrhenius regimes, about 515 kJ/mol515\ \mathrm{kJ/mol} above 1400 ∘C1400\,^{\circ}\mathrm{C} and 720 kJ/mol720\ \mathrm{kJ/mol} below (Doremus 2002); broken-bond ("configuron") fits to viscosity yield effective formation and motion enthalpies and entropies for silica; molecular-dynamics simulations find defect concentrations that are Arrhenius in temperature, activated transport at low temperature, and a fragile-to-strong crossover near 31003100-3300 K3300\ \mathrm{K}; and systematic measurements on differently doped silica melts confirm that trace OH, Cl, F and alkalis reduce both TgT_{\mathrm{g}} and the apparent activation energy, with a common crossover near 22002200-2500 K2500\ \mathrm{K} attributed to intrinsic defects dominating at high temperature. Alternative descriptions of flow in strong network liquids include Doremus's SiO-molecule line-defect mechanism (flow carried by line defects composed of SiO molecules) and random-first-order-transition theory, a cooperative-rearrangement theory of the glass transition. What is still missing is the microscopic, quantitative closure of Mott's questions.

Problem Statement

Provide a quantitative, microscopic, and testable account of defect-mediated viscous flow in vitreous silicon dioxide that resolves the issues N. F. Mott (1987) left open, namely:

  1. Defect energetics. Determine, by independent calculation or measurement rather than by fitting the viscosity itself, the formation energy WW (with its entropy) and the migration activation energy UU of the flow-mediating defect(s) in the continuous random network of vitreous SiO2\mathrm{SiO_2} - including whether the relevant defect is the broken-bond charged pair (threefold-coordinated silicon plus non-bridging oxygen), the over-bonded variants found in ab initio work, or another species - and hence the combinations W+UW+U and 2W+U2W+U that the two proposed mechanisms predict for the apparent activation energy.
  2. Entropic prefactor. Establish microscopically the origin of the large entropy factor exp⁡(ΔS/kB)≈107\exp(\Delta S/k_{\mathrm{B}})\approx 10^{7} implied by viscosity fits to high-purity silica (activation energy ≈7.4 eV\approx 7.4\ \mathrm{eV}): either derive it, or demonstrate that it must be attributed to another source, or refute its attribution to flow events altogether.
  3. Mechanism map. Determine which flow mechanism (single-bond ring diffusion with activation W+UW+U, two-bond Coulomb-assisted recombination with activation 2W+U2W+U, or higher-order multi-defect or cooperative processes) dominates the measured η(T)\eta(T) in each temperature and composition range, and test quantitatively the predicted reduction of the apparent activation energy when the concentration of non-bridging oxygens introduced by dopants (water, halogens, alkalis) exceeds the thermal concentration exp⁡(−W/kBT)\exp(-W/k_{\mathrm{B}}T).
  4. Network kinetics. Derive the kinetics of defect formation, mutual capture, and recombination in the three-dimensional continuous random network and connect them quantitatively to the measured viscosity of high-purity and doped silica.

All four items are required, and together they define one scientific objective: a validated microscopic model that reproduces the measured η(T)\eta(T) of vitreous and doped silica across the experimentally accessible range - including the two-activation-energy structure (∼720 kJ/mol\sim 720\ \mathrm{kJ/mol} below ∼1400 ∘C\sim 1400\,^{\circ}\mathrm{C}, ∼515 kJ/mol\sim 515\ \mathrm{kJ/mol} above) and the purity-dependent crossover near 22002200-2500 K2500\ \mathrm{K} - using defect parameters determined independently of the viscosity data being predicted.

References

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